PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and a 600mA Continuous Collector Current. Operates with a 200MHz transition frequency and offers a minimum hFE of 100. Packaged in a SOT-23 surface mount plastic package, this RoHS compliant component is designed for automotive and AEC-Q101 series applications.
Frequency200MHz
PackageSOT-23
Current Rating-150mA
MountingSurface Mount
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Technical Specifications
Diodes MMBT2907A-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-1.6V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
1.6V
Continuous Collector Current
-600mA
Current Rating
-150mA
Emitter Base Voltage (VEBO)
5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
60V
Max Collector Current
600mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Termination
SMD/SMT
Transition Frequency
200MHz
DC Rated Voltage
-60V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMBT2907A-7-F Datasheet
Download the complete datasheet for Diodes MMBT2907A-7-F to view detailed technical specifications.
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