
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage (VCEO) and a continuous collector current of -600mA. Operates with a transition frequency of 200MHz and a minimum hFE of 100. Packaged in an ultra-small SOT-523 plastic surface mount package, ideal for space-constrained designs. Rated for a maximum power dissipation of 150mW and an operating temperature range of -55°C to 150°C.
Diodes MMBT2907AT-7 technical specifications.
| Package/Case | SOT-523 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -1.6V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Continuous Collector Current | -600mA |
| Current Rating | -600mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 0.75mm |
| hFE Min | 100 |
| Lead Free | Contains Lead |
| Length | 1.6mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -60V |
| Weight | 7.1E-05oz |
| Width | 0.8mm |
| RoHS | Not Compliant |
Download the complete datasheet for Diodes MMBT2907AT-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
