PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage (VCEO) and a continuous collector current of -600mA. Operates with a transition frequency of 200MHz and a minimum hFE of 100. Packaged in an ultra-small SOT-523 plastic surface mount package, ideal for space-constrained designs. Rated for a maximum power dissipation of 150mW and an operating temperature range of -55°C to 150°C.
Frequency200MHz
PackageSOT-523
Current Rating-600mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes MMBT2907AT-7 technical specifications.
General
Package/Case
SOT-523
Collector Base Voltage (VCBO)
-60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-1.6V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
1.6V
Continuous Collector Current
-600mA
Current Rating
-600mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
0.75mm
hFE Min
100
Lead Free
Contains Lead
Length
1.6mm
Max Breakdown Voltage
60V
Max Collector Current
600mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
150mW
Reach SVHC Compliant
Yes
RoHS Compliant
No
Transition Frequency
200MHz
DC Rated Voltage
-60V
Weight
7.1E-05oz
Width
0.8mm
Compliance
RoHS
Not Compliant
Datasheet
Diodes MMBT2907AT-7 Datasheet
Download the complete datasheet for Diodes MMBT2907AT-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
