PNP bipolar junction transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage (VCEO) and a continuous collector current of -600mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Packaged in an ultra-small SOT-523 plastic package for surface mounting, with a maximum power dissipation of 150mW. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
Frequency200MHz
PackageSOT-523
Current Rating-600mA
MountingSurface Mount
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Technical Specifications
Diodes MMBT2907AT-7-F technical specifications.
General
Package/Case
SOT-523
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-1.6V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
1.6V
Continuous Collector Current
-600mA
Current Rating
-600mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
0.75mm
hFE Min
100
Lead Free
Lead Free
Length
1.6mm
Max Breakdown Voltage
60V
Max Collector Current
600mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Termination
SMD/SMT
Transition Frequency
200MHz
DC Rated Voltage
-60V
Weight
7.1E-05oz
Width
0.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMBT2907AT-7-F Datasheet
Download the complete datasheet for Diodes MMBT2907AT-7-F to view detailed technical specifications.
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