MMBT3904-7-F

Datasheet

NPN BJT Transistor, 40V VCEO, 200mA IC, 300MHz, SOT-23, SMD

Diodes

MMBT3904-7-F

Name: MMBT3904-7-F Diodes
Brand: Diodes
SKU: MMBT3904-7-F
Price: 0.44 USD
Availability: InStock

NPN BJT Transistor, 40V VCEO, 200mA IC, 300MHz, SOT-23, SMD

NPN bipolar junction transistor for small signal applications. Features a 40V collector-emitter breakdown voltage and 200mA continuous collector current. Operates with a maximum power dissipation of 350mW and a transition frequency of 300MHz. Packaged in a SOT-23 surface mount plastic package, this silicon transistor is RoHS compliant and suitable for automotive applications.

Frequency300MHz

PackageSOT-23

MountingSurface Mount

PolarityNPN

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Technical Specifications

Diodes MMBT3904-7-F technical specifications.

General

Package/Case	SOT-23
Collector Base Voltage (VCBO)	60V
Collector Emitter Breakdown Voltage	40V
Collector Emitter Saturation Voltage	300mV
Collector Emitter Voltage (VCEO)	40V
Collector-emitter Voltage-Max	300mV
Continuous Collector Current	200mA
Emitter Base Voltage (VEBO)	6V
Frequency	300MHz
Gain Bandwidth Product	300MHz
Height	1mm
hFE Min	100
Lead Free	Lead Free
Length	3.05mm
Max Breakdown Voltage	40V
Max Collector Current	200mA
Max Frequency	300MHz
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	300mW
Mount	Surface Mount
Number of Elements	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	350mW
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	Automotive, AEC-Q101
Transition Frequency	300MHz
DC Rated Voltage	40V
Weight	0.000282oz
Width	1.4mm
Power - Max	300 mW
Frequency - Transition	300MHz