NPN bipolar junction transistor for small signal applications. Features a 40V collector-emitter breakdown voltage and 200mA continuous collector current. Operates with a maximum power dissipation of 350mW and a transition frequency of 300MHz. Packaged in a SOT-23 surface mount plastic package, this silicon transistor is RoHS compliant and suitable for automotive applications.
Frequency300MHz
PackageSOT-23
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Diodes MMBT3904-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
200mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
40V
Max Collector Current
200mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Transition Frequency
300MHz
DC Rated Voltage
40V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMBT3904-7-F Datasheet
Download the complete datasheet for Diodes MMBT3904-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
