
NPN bipolar junction transistor for small signal applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a 200mA continuous collector current. Operates with a 300mV collector-emitter saturation voltage and a 6V emitter-base voltage (VEBO). Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 300MHz. Housed in an ultra-small, 3-pin plastic SOT-523 surface mount package.
Diodes MMBT3904T-7-F technical specifications.
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