
PNP bipolar junction transistor (BJT) for surface mount applications in a SOT-23 package. Features a 40V collector-emitter voltage (VCEO) and a continuous collector current of -200mA. Offers a maximum power dissipation of 300mW and a transition frequency of 250MHz. Includes a minimum hFE of 100 and operates across a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
Diodes MMBT3906-7-F technical specifications.
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