NPN silicon bipolar junction transistor in a SOT-523 surface mount package. Features a 40V collector-emitter breakdown voltage (VCEO) and a 600mA continuous collector current (IC). Offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 250MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 150mW.
Frequency250MHz
PackageSOT-523
Current Rating600mA
MountingSurface Mount
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Technical Specifications
Diodes MMBT4401T-7-F technical specifications.
General
Package/Case
SOT-523
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
750mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
750mV
Continuous Collector Current
600mA
Current Rating
600mA
Emitter Base Voltage (VEBO)
6V
Frequency
250MHz
Gain Bandwidth Product
250MHz
Height
0.75mm
hFE Min
100
Lead Free
Lead Free
Length
1.6mm
Max Breakdown Voltage
40V
Max Collector Current
600mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
250MHz
DC Rated Voltage
40V
Weight
7.1E-05oz
Width
0.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMBT4401T-7-F Datasheet
Download the complete datasheet for Diodes MMBT4401T-7-F to view detailed technical specifications.
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