PNP Silicon Bipolar Junction Transistor (BJT) for general-purpose switching and amplification. Features a 40V collector-emitter breakdown voltage and a continuous collector current of 600mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Packaged in a TO-236-3 (SOT-23) plastic surface-mount package, suitable for tape and reel assembly. Operates across a wide temperature range from -55°C to 150°C.
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Diodes MMBT4403-7 technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -750mV |
| Collector-emitter Voltage-Max | 750mV |
| Continuous Collector Current | -600mA |
| Current Rating | -600mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 200MHz |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Contains Lead |
| Length | 3.05mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -40V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Not Compliant |
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