PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 40V Collector Emitter Breakdown Voltage (VCEO) and a 40V Collector Base Voltage (VCBO). Offers a continuous collector current of -600mA and a transition frequency of 200MHz. Housed in a compact SOT-23 plastic package, this silicon transistor is AEC-Q101 qualified and RoHS compliant.
Frequency200MHz
PackageSOT-23
Current Rating-600mA
MountingSurface Mount
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Technical Specifications
Diodes MMBT4403-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-750mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
750mV
Continuous Collector Current
-600mA
Current Rating
-600mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
40V
Max Collector Current
600mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Transition Frequency
200MHz
DC Rated Voltage
-40V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMBT4403-7-F Datasheet
Download the complete datasheet for Diodes MMBT4403-7-F to view detailed technical specifications.
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