MMBT4403T-7

PNP BJT Transistor, 40V, 600mA, 200MHz, SOT-523

PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -600mA and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Packaged in an ultra-small SOT-523 plastic surface-mount package, ideal for compact designs. Operates across a wide temperature range from -55°C to 150°C.

PackageSOT-523

Current Rating-600mA

MountingSurface Mount

PolarityPNP

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Technical Specifications

Diodes MMBT4403T-7 technical specifications.

General

Package/Case	SOT-523
Collector Base Voltage (VCBO)	-40V
Collector Emitter Breakdown Voltage	40V
Collector Emitter Saturation Voltage	-750mV
Collector-emitter Voltage-Max	750mV
Continuous Collector Current	-600mA
Current Rating	-600mA
Emitter Base Voltage (VEBO)	-5V
Gain Bandwidth Product	200MHz
Height	0.75mm
hFE Min	100
Lead Free	Contains Lead
Length	1.6mm
Max Breakdown Voltage	40V
Max Collector Current	600mA
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	150mW
Mount	Surface Mount
Package Quantity	1
Packaging	Tape and Reel
Polarity	PNP
Reach SVHC Compliant	Yes
RoHS Compliant	No
Transition Frequency	200MHz
DC Rated Voltage	-40V
Weight	7.1E-05oz
Width	0.8mm