PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -600mA. Operates with a maximum power dissipation of 150mW and a transition frequency of 200MHz. Packaged in an ultra-small SOT-523 surface-mount plastic package, this device is RoHS and REACH SVHC compliant.
Frequency200MHz
PackageSOT-523
Current Rating-600mA
MountingSurface Mount
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Technical Specifications
Diodes MMBT4403T-7-F technical specifications.
General
Package/Case
SOT-523
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-750mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
750mV
Continuous Collector Current
-600mA
Current Rating
-600mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
0.75mm
hFE Min
100
Lead Free
Lead Free
Length
1.6mm
Max Breakdown Voltage
40V
Max Collector Current
600mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-40V
Weight
7.1E-05oz
Width
0.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMBT4403T-7-F Datasheet
Download the complete datasheet for Diodes MMBT4403T-7-F to view detailed technical specifications.
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