NPN silicon bipolar junction transistor for surface mount applications. Features a 60V collector-emitter breakdown voltage (VCEO) and 500mA continuous collector current (IC). Offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 100MHz. Packaged in a compact SOT-23 plastic package, this component is RoHS and REACH SVHC compliant, operating across a temperature range of -55°C to 150°C.
Frequency100MHz
PackageSOT-23
Current Rating100mA
MountingSurface Mount
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Technical Specifications
Diodes MMBTA05-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
500mA
Current Rating
100mA
Emitter Base Voltage (VEBO)
4V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
60V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Transition Frequency
100MHz
DC Rated Voltage
60V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMBTA05-7-F Datasheet
Download the complete datasheet for Diodes MMBTA05-7-F to view detailed technical specifications.
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