NPN bipolar junction transistor in a SOT-23 surface mount package. Features 80V collector-emitter breakdown voltage (VCEO) and 500mA continuous collector current (IC). Offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 100MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW.
Diodes MMBTA06-7 technical specifications.
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