NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features 80V collector-emitter breakdown voltage (VCEO) and 500mA continuous collector current. Operates with a transition frequency of 100MHz and a minimum hFE of 100. Housed in a compact SOT-23 plastic package, this silicon transistor is RoHS compliant and AEC-Q101 qualified.
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Diodes MMBTA06-7-F technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101 |
| Termination | SMD/SMT |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 80V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
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