NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features 80V collector-emitter breakdown voltage (VCEO) and 500mA continuous collector current. Operates with a transition frequency of 100MHz and a minimum hFE of 100. Housed in a compact SOT-23 plastic package, this silicon transistor is RoHS compliant and AEC-Q101 qualified.
Frequency100MHz
PackageSOT-23
Current Rating500mA
MountingSurface Mount
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Technical Specifications
Diodes MMBTA06-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
500mA
Current Rating
500mA
Emitter Base Voltage (VEBO)
4V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
80V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Termination
SMD/SMT
Transition Frequency
100MHz
DC Rated Voltage
80V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMBTA06-7-F Datasheet
Download the complete datasheet for Diodes MMBTA06-7-F to view detailed technical specifications.
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