
NPN bipolar junction transistor for surface mount applications. Features a 300V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a 50MHz transition frequency and offers a minimum DC current gain (hFE) of 40. Encased in a compact SOT-23 plastic package, this RoHS compliant component is rated for a maximum power dissipation of 300mW and operates across a temperature range of -55°C to 150°C.
Diodes MMBTA42-7-F technical specifications.
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