DIODES

MMBTA42-7-F

Datasheet

NPN BJT Transistor, 300V VCEO, 500mA IC, 50MHz, SOT-23

Diodes

MMBTA42-7-F

Name: MMBTA42-7-F Diodes
Brand: Diodes
SKU: MMBTA42-7-F

NPN BJT Transistor, 300V VCEO, 500mA IC, 50MHz, SOT-23

NPN bipolar junction transistor for surface mount applications. Features a 300V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a 50MHz transition frequency and offers a minimum DC current gain (hFE) of 40. Encased in a compact SOT-23 plastic package, this RoHS compliant component is rated for a maximum power dissipation of 300mW and operates across a temperature range of -55°C to 150°C.

Frequency50MHz

PackageSOT-23

Current Rating200mA

MountingSurface Mount

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Technical Specifications

Diodes MMBTA42-7-F technical specifications.

General

Package/Case	SOT-23
Collector Base Voltage (VCBO)	300V
Collector Emitter Breakdown Voltage	300V
Collector Emitter Saturation Voltage	500mV
Collector Emitter Voltage (VCEO)	300V
Collector-emitter Voltage-Max	500mV
Continuous Collector Current	500mA
Current Rating	200mA
Emitter Base Voltage (VEBO)	6V
Frequency	50MHz
Gain Bandwidth Product	50MHz
Height	1mm
hFE Min	40
Lead Free	Lead Free
Length	3.05mm
Max Breakdown Voltage	300V
Max Collector Current	500mA
Max Frequency	50MHz
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	300mW
Mount	Surface Mount
Number of Elements	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	300mW
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	Automotive, AEC-Q101
Termination	SMD/SMT
Transition Frequency	50MHz
DC Rated Voltage	300V
Weight	0.000282oz
Width	1.4mm