PNP Silicon Bipolar Junction Transistor (BJT) for switching applications. Features a 60V Collector Emitter Breakdown Voltage (VCEO) and 60V Collector Base Voltage (VCBO). Offers a continuous collector current of -500mA and a minimum DC current gain (hFE) of 100. Operates with a transition frequency of 50MHz and a maximum power dissipation of 300mW. Packaged in a SOT-23 surface-mount plastic case, this RoHS compliant component is designed for high reliability.
Frequency50MHz
PackageSOT-23
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
Diodes MMBTA55-7-F technical specifications.
General
Additional Feature
HIGH RELIABILITY
Package/Case
SOT-23
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
-500mA
Current Rating
-100mA
DC Current Gain-Min (hFE)
100
Emitter Base Voltage (VEBO)
-4V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
1mm
hFE Min
100
JESD-30 Code
R-PDSO-G3
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
60V
Max Collector Current
500mA
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Moisture Sensitivity Level
1
Mount
Surface Mount
Number of Elements
1
Package Body Material
Plastic
Package Quantity
3000
Package Shape
Rectangular
Packaging
Tape and Reel
Peak Reflow Temperature (Cel)
260°C
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
10s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency
50MHz
DC Rated Voltage
-60V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMBTA55-7-F Datasheet
Download the complete datasheet for Diodes MMBTA55-7-F to view detailed technical specifications.
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