PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features 80V Collector Emitter Breakdown Voltage (VCEO) and 80V Collector Base Voltage (VCBO). Offers a continuous collector current of -500mA and a maximum power dissipation of 300mW. Operates within a temperature range of -55°C to 150°C with a transition frequency of 50MHz. Packaged in a SOT-23 surface-mount plastic package, this RoHS and REACH SVHC compliant component is supplied on tape and reel.
Frequency50MHz
PackageSOT-23
Current Rating-100mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes MMBTA56-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
-500mA
Current Rating
-100mA
Emitter Base Voltage (VEBO)
4V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
80V
Max Collector Current
500mA
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Transition Frequency
50MHz
DC Rated Voltage
-80V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMBTA56-7-F Datasheet
Download the complete datasheet for Diodes MMBTA56-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.