MMDT2222A-7-F

Datasheet

NPN BJT Transistor, 40V VCEO, 0.6A IC, 300MHz, 2-Element, SOT-363

Diodes

MMDT2222A-7-F

Name: MMDT2222A-7-F Diodes
Brand: Diodes
SKU: MMDT2222A-7-F

NPN BJT Transistor, 40V VCEO, 0.6A IC, 300MHz, 2-Element, SOT-363

NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 600mA. Operates with a minimum hFE of 100 and a transition frequency of 300MHz. Housed in a compact SOT-363 surface mount plastic package, this RoHS compliant component offers a wide operating temperature range from -55°C to 150°C.

Frequency300MHz

PackageSOT-363

Current Rating600mA

MountingSurface Mount

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Technical Specifications

Diodes MMDT2222A-7-F technical specifications.

General

Package/Case	SOT-363
Collector Base Voltage (VCBO)	75V
Collector Emitter Breakdown Voltage	40V
Collector Emitter Saturation Voltage	1V
Collector Emitter Voltage (VCEO)	40V
Collector-emitter Voltage-Max	1V
Continuous Collector Current	600mA
Current Rating	600mA
Emitter Base Voltage (VEBO)	6V
Frequency	300MHz
Gain Bandwidth Product	300MHz
Height	1mm
hFE Min	100
Lead Free	Lead Free
Length	2.2mm
Max Breakdown Voltage	40V
Max Collector Current	600mA
Max Frequency	300MHz
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	200mW
Mount	Surface Mount
Number of Elements	2
Package Quantity	3000
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	200mW
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Termination	SMD/SMT
Transition Frequency	300MHz
DC Rated Voltage	40V
Weight	0.000212oz
Width	1.35mm