PNP Silicon Bipolar Junction Transistor (BJT) for switching applications. Features a 60V collector-emitter breakdown voltage and a continuous collector current of -600mA. Offers a minimum DC current gain (hFE) of 50 and a transition frequency of 200MHz. Packaged in an ultra-small, 6-lead plastic SOT-363 surface-mount package. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW.
Frequency200MHz
PackageSOT-363
Current Rating-600mA
MountingSurface Mount
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Technical Specifications
Diodes MMDT2907A-7 technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
-60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-1.6V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
1.6V
Continuous Collector Current
-600mA
Current Rating
-600mA
DC Current Gain-Min (hFE)
50
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
hFE Min
100
JESD-30 Code
R-PDSO-G6
Lead Free
Contains Lead
Length
2.2mm
Max Breakdown Voltage
60V
Max Collector Current
600mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Moisture Sensitivity Level
1
Mount
Surface Mount
Number of Elements
2
Package Body Material
Plastic
Package Quantity
3000
Package Shape
Rectangular
Packaging
Tape and Reel
Peak Reflow Temperature (Cel)
245°C
Polarity
PNP
Power Dissipation
200mW
Reach SVHC Compliant
Yes
RoHS Compliant
No
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
5s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency
200MHz
DC Rated Voltage
-60V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Not Compliant
Datasheet
Diodes MMDT2907A-7 Datasheet
Download the complete datasheet for Diodes MMDT2907A-7 to view detailed technical specifications.
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