DIODES

MMDT2907A-7

Datasheet

PNP BJT Transistor, 60V, 600mA, 200MHz, SOT-363

Diodes

MMDT2907A-7

Name: MMDT2907A-7 Diodes
Brand: Diodes
SKU: MMDT2907A-7

PNP BJT Transistor, 60V, 600mA, 200MHz, SOT-363

PNP Silicon Bipolar Junction Transistor (BJT) for switching applications. Features a 60V collector-emitter breakdown voltage and a continuous collector current of -600mA. Offers a minimum DC current gain (hFE) of 50 and a transition frequency of 200MHz. Packaged in an ultra-small, 6-lead plastic SOT-363 surface-mount package. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW.

Frequency200MHz

PackageSOT-363

Current Rating-600mA

MountingSurface Mount

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Technical Specifications

Diodes MMDT2907A-7 technical specifications.

General

Package/Case	SOT-363
Collector Base Voltage (VCBO)	-60V
Collector Emitter Breakdown Voltage	60V
Collector Emitter Saturation Voltage	-1.6V
Collector Emitter Voltage (VCEO)	60V
Collector-emitter Voltage-Max	1.6V
Continuous Collector Current	-600mA
Current Rating	-600mA
DC Current Gain-Min (hFE)	50
Emitter Base Voltage (VEBO)	-5V
Frequency	200MHz
Gain Bandwidth Product	200MHz
Height	1mm
hFE Min	100
JESD-30 Code	R-PDSO-G6
Lead Free	Contains Lead
Length	2.2mm
Max Breakdown Voltage	60V
Max Collector Current	600mA
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	200mW
Moisture Sensitivity Level	1
Mount	Surface Mount
Number of Elements	2
Package Body Material	Plastic
Package Quantity	3000
Package Shape	Rectangular
Packaging	Tape and Reel
Peak Reflow Temperature (Cel)	245°C
Polarity	PNP
Power Dissipation	200mW
Reach SVHC Compliant	Yes
RoHS Compliant	No
Surface Mount	Yes
Terminal Form	Gull Wing
Terminal Position	DUAL
Time @ Peak Reflow Temperature-Max (s)	5s
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Transition Frequency	200MHz
DC Rated Voltage	-60V
Weight	0.000212oz
Width	1.35mm