NPN Silicon Bipolar Junction Transistor for switching applications. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a 200mA Continuous Collector Current (IC). Offers a minimum DC Current Gain (hFE) of 100 and a transition frequency of 300MHz. Housed in an ultra-small, 6-lead plastic SOT-363 package for surface mounting. Operates within a temperature range of -55°C to +150°C and is RoHS compliant.
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Diodes MMDT3904-7-F technical specifications.
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 200mA |
| Current Rating | 200mA |
| DC Current Gain-Min (hFE) | 30 |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| hFE Min | 100 |
| JESD-30 Code | R-PDSO-G6 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Moisture Sensitivity Level | 1 |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Quantity | 3000 |
| Package Shape | Rectangular |
| Packaging | Tape and Reel |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Time @ Peak Reflow Temperature-Max (s) | 10s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 40V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
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