DIODES

MMDT3904-7-F

Datasheet

NPN BJT Transistor, 40V VCEO, 200mA IC, 300MHz, SOT-363

Diodes

MMDT3904-7-F

Name: MMDT3904-7-F Diodes
Brand: Diodes
SKU: MMDT3904-7-F

NPN BJT Transistor, 40V VCEO, 200mA IC, 300MHz, SOT-363

NPN Silicon Bipolar Junction Transistor for switching applications. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a 200mA Continuous Collector Current (IC). Offers a minimum DC Current Gain (hFE) of 100 and a transition frequency of 300MHz. Housed in an ultra-small, 6-lead plastic SOT-363 package for surface mounting. Operates within a temperature range of -55°C to +150°C and is RoHS compliant.

Frequency300MHz

PackageSOT-363

Current Rating200mA

MountingSurface Mount

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Technical Specifications

Diodes MMDT3904-7-F technical specifications.

General

Package/Case	SOT-363
Collector Base Voltage (VCBO)	60V
Collector Emitter Breakdown Voltage	40V
Collector Emitter Saturation Voltage	300mV
Collector Emitter Voltage (VCEO)	40V
Collector-emitter Voltage-Max	300mV
Continuous Collector Current	200mA
Current Rating	200mA
DC Current Gain-Min (hFE)	30
Emitter Base Voltage (VEBO)	6V
Frequency	300MHz
Gain Bandwidth Product	300MHz
Height	1mm
hFE Min	100
JESD-30 Code	R-PDSO-G6
Lead Free	Lead Free
Length	2.2mm
Max Breakdown Voltage	40V
Max Collector Current	200mA
Max Frequency	300MHz
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	200mW
Moisture Sensitivity Level	1
Mount	Surface Mount
Number of Elements	2
Package Body Material	Plastic
Package Quantity	3000
Package Shape	Rectangular
Packaging	Tape and Reel
Peak Reflow Temperature (Cel)	260°C
Polarity	NPN
Power Dissipation	200mW
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Surface Mount	Yes
Terminal Finish	Tin
Terminal Form	Gull Wing
Terminal Position	DUAL
Time @ Peak Reflow Temperature-Max (s)	10s
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Transition Frequency	300MHz
DC Rated Voltage	40V
Weight	0.000212oz
Width	1.35mm