
NPN bipolar junction transistor featuring a 40V collector-emitter breakdown voltage and 200mA continuous collector current. This surface mount device offers a 300MHz transition frequency and a minimum hFE of 100. Housed in an ultra-small SOT-563 plastic package, it operates across a temperature range of -55°C to 150°C with a 200mW power dissipation. This 2-element transistor is RoHS compliant.
Diodes MMDT3904V-7 technical specifications.
Download the complete datasheet for Diodes MMDT3904V-7 to view detailed technical specifications.
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