NPN bipolar junction transistor featuring a 40V collector-emitter breakdown voltage and 200mA maximum collector current. This silicon transistor operates with a 300MHz transition frequency and a minimum hFE of 40. Housed in an ultra-small SOT-563 surface mount plastic package, it offers a 300mV collector-emitter saturation voltage and a 6V emitter-base voltage. Designed for lead-free and RoHS compliant applications, it operates across a temperature range of -55°C to 150°C.
Frequency300MHz
PackageSOT-563
Current Rating200mA
MountingSurface Mount
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Technical Specifications
Diodes MMDT3904VC-7 technical specifications.
General
Package/Case
SOT-563
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
300mV
Current Rating
200mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
0.6mm
hFE Min
40
Lead Free
Lead Free
Length
1.6mm
Max Breakdown Voltage
40V
Max Collector Current
200mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
40V
Weight
0.000106oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMDT3904VC-7 Datasheet
Download the complete datasheet for Diodes MMDT3904VC-7 to view detailed technical specifications.
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