PNP Silicon Bipolar Junction Transistor, featuring a 40V Collector-Emitter Breakdown Voltage (VCEO) and a 250MHz Gain Bandwidth Product (GBW). This surface-mount transistor offers a continuous collector current of -200mA and a maximum power dissipation of 200mW. Packaged in an ultra-small SOT-363 plastic package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency250MHz
PackageSOT-363
Current Rating-200mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes MMDT3906-7-F technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-400mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
400mV
Continuous Collector Current
-200mA
Current Rating
-200mA
Emitter Base Voltage (VEBO)
-5V
Frequency
250MHz
Gain Bandwidth Product
250MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
40V
Max Collector Current
200mA
Max Frequency
250MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
250MHz
DC Rated Voltage
-40V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMDT3906-7-F Datasheet
Download the complete datasheet for Diodes MMDT3906-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
