PNP Silicon Bipolar Junction Transistor, featuring a 40V Collector-Emitter Breakdown Voltage (VCEO) and a 250MHz Gain Bandwidth Product (GBW). This surface-mount transistor offers a continuous collector current of -200mA and a maximum power dissipation of 200mW. Packaged in an ultra-small SOT-363 plastic package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency250MHz
PackageSOT-363
Current Rating-200mA
MountingSurface Mount
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Technical Specifications
Diodes MMDT3906-7-F technical specifications.
General
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Continuous Collector Current | -200mA |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -40V |
| Weight | 0.000212oz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes MMDT3906-7-F Datasheet
Download the complete datasheet for Diodes MMDT3906-7-F to view detailed technical specifications.
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