PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a 200mA Maximum Collector Current (IC). Operates with a 250MHz transition frequency and offers a minimum hFE of 60. Housed in an ultra-small, 6-lead plastic SOT-563 package for surface mounting. RoHS compliant and lead-free.
Sign in to ask questions about the Diodes MMDT3906VC-7 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes MMDT3906VC-7 technical specifications.
| Package/Case | SOT-563 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| Height | 0.6mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -40V |
| Weight | 0.000106oz |
| Width | 1.2mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes MMDT3906VC-7 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
