PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a 200mA Maximum Collector Current (IC). Operates with a 250MHz transition frequency and offers a minimum hFE of 60. Housed in an ultra-small, 6-lead plastic SOT-563 package for surface mounting. RoHS compliant and lead-free.
Frequency250MHz
PackageSOT-563
Current Rating-200mA
MountingSurface Mount
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Technical Specifications
Diodes MMDT3906VC-7 technical specifications.
General
Package/Case
SOT-563
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-400mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
400mV
Current Rating
-200mA
Emitter Base Voltage (VEBO)
5V
Frequency
250MHz
Gain Bandwidth Product
250MHz
Height
0.6mm
hFE Min
60
Lead Free
Lead Free
Length
1.6mm
Max Breakdown Voltage
40V
Max Collector Current
200mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
250MHz
DC Rated Voltage
-40V
Weight
0.000106oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMDT3906VC-7 Datasheet
Download the complete datasheet for Diodes MMDT3906VC-7 to view detailed technical specifications.
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