MMDT4124-7-F

NPN BJT Transistor, 25V VCEO, 200mA IC, 300MHz fT, SOT-363

NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 25V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 200mA. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 300MHz. Packaged in an ultra-small, 6-lead plastic SOT-363 surface-mount package. Operates across a temperature range of -55°C to +150°C. RoHS compliant and lead-free.

PackageSOT-363

Current Rating200mA

MountingSurface Mount

PolarityNPN

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Technical Specifications

Diodes MMDT4124-7-F technical specifications.

General

Package/Case	SOT-363
Collector Base Voltage (VCBO)	30V
Collector Emitter Breakdown Voltage	25V
Collector Emitter Saturation Voltage	300mV
Collector Emitter Voltage (VCEO)	25V
Collector-emitter Voltage-Max	300mV
Continuous Collector Current	200mA
Current Rating	200mA
Emitter Base Voltage (VEBO)	5V
Gain Bandwidth Product	300MHz
Height	1mm
hFE Min	120
Lead Free	Lead Free
Length	2.2mm
Max Breakdown Voltage	25V
Max Collector Current	200mA
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	200mW
Mount	Surface Mount
Package Quantity	3000
Packaging	Tape and Reel
Polarity	NPN
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Termination	SMD/SMT
Transition Frequency	300MHz
DC Rated Voltage	25V
Weight	0.000212oz
Width	1.35mm