PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -600mA. Operates with a maximum power dissipation of 200mW and a transition frequency of 200MHz. Packaged in an ultra-small SOT-323 plastic package for surface mounting, this component is RoHS compliant and lead-free.
Frequency200MHz
PackageSOT-323
Current Rating-600mA
MountingSurface Mount
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Technical Specifications
Diodes MMST2907A-7-F technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-1.6V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
1.6V
Continuous Collector Current
-600mA
Current Rating
-600mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
60V
Max Collector Current
600mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
200MHz
DC Rated Voltage
-60V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMST2907A-7-F Datasheet
Download the complete datasheet for Diodes MMST2907A-7-F to view detailed technical specifications.
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