NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a continuous collector current (IC) of 200mA. Operates with a maximum power dissipation of 200mW and a transition frequency of 300MHz. Housed in an ultra-small SOT-323 plastic package for surface mounting, this RoHS compliant component offers a minimum DC current gain (hFE) of 100.
Frequency300MHz
PackageSOT-323
Current Rating200mA
MountingSurface Mount
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Technical Specifications
Diodes MMST3904-7-F technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
200mA
Current Rating
200mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
40V
Max Collector Current
200mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
300MHz
DC Rated Voltage
40V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMST3904-7-F Datasheet
Download the complete datasheet for Diodes MMST3904-7-F to view detailed technical specifications.
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