PNP Silicon Bipolar Junction Transistor (BJT) in an ultra-small SOT-323 plastic package. Features a 40V collector-emitter breakdown voltage (VCEO) and a continuous collector current of -200mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 300MHz. Designed for surface mount applications with a maximum power dissipation of 200mW and an operating temperature range of -55°C to 150°C.
Frequency300MHz
PackageSOT-323
Current Rating-200mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes MMST3906-7-F technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
-40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-300mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
-200mA
Current Rating
-200mA
Emitter Base Voltage (VEBO)
-5V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
40V
Max Collector Current
200mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
-40V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMST3906-7-F Datasheet
Download the complete datasheet for Diodes MMST3906-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.