PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 150V collector-emitter breakdown voltage (VCEO) and a 200mA maximum collector current (IC). Operates with a 300MHz transition frequency and a minimum hFE of 50. Packaged in an ultra-small SOT-323 plastic surface-mount package, this silicon transistor is RoHS compliant and operates from -55°C to 150°C.
Frequency300MHz
PackageSOT-323
Current Rating-200mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes MMST5401-7-F technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
160V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
150V
Collector-emitter Voltage-Max
500mV
Current Rating
-200mA
Emitter Base Voltage (VEBO)
5V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
50
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
150V
Max Collector Current
200mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
-150V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMST5401-7-F Datasheet
Download the complete datasheet for Diodes MMST5401-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.