NPN silicon bipolar junction transistor for surface mount applications. Features a 60V collector-emitter breakdown voltage (VCEO) and 500mA continuous collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Packaged in an ultra-small SOT-323 plastic package, this component operates from -55°C to 150°C and is RoHS compliant.
PackageSOT-323
Current Rating500mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes MMSTA05-7-F technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
500mA
Current Rating
500mA
Emitter Base Voltage (VEBO)
4V
Gain Bandwidth Product
100MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
60V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
100MHz
DC Rated Voltage
60V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMSTA05-7-F Datasheet
Download the complete datasheet for Diodes MMSTA05-7-F to view detailed technical specifications.
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