
N-channel JFET, surface mount, in a 6-pin SOT-363 plastic package. Features 60V drain-to-source breakdown voltage, 200mA continuous drain current, and 20V gate-to-source voltage. Offers 2R drain-to-source resistance and 50pF input capacitance. Operates from -55°C to 150°C with a maximum power dissipation of 200mW. RoHS compliant and lead-free.
Diodes NMSD200B01-7 technical specifications.
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 200mA |
| Current Rating | 200mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 60V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes NMSD200B01-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
