This silicon transient voltage suppressor diode has a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It features a unidirectional polarity and a terminal position of dual. The diode element material is silicon and the diode type is a transient voltage suppressor diode. The maximum reverse voltage is 10 volts and the minimum breakdown voltage is 11.1 volts. The maximum non-repetitive peak reverse power dissipation is 400 milliwatts and the maximum power dissipation is 1 watt.
Diodes P4SMAJ10ADF-13 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 10 |
| Breakdown Voltage-Min | 11.1 |
| Non-rep Peak Rev Power Dis-Max | 400 |
| Breakdown Voltage-Max | 12.3 |
| Power Dissipation-Max | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Diodes P4SMAJ10ADF-13 to view detailed technical specifications.
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