N-channel JFET for small signal applications. Features 60V drain-source breakdown voltage and 150mA continuous drain current. Offers a maximum drain-source on-resistance of 5 Ohms. Encased in a SOT-23 surface-mount package, this silicon FET operates from -55°C to 150°C with 330mW power dissipation.
PackageSOT-23
Current Rating150mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes VN10LFTA technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
150mA
Current Rating
150mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
7.5R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
5R
Dual Supply Voltage
60V
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
60pF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
330mW
Mount
Surface Mount
Nominal Vgs
2.5V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
330mW
Rds On Max
5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
2.5V
DC Rated Voltage
60V
Weight
0.000282oz
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Diodes VN10LFTA Datasheet
Download the complete datasheet for Diodes VN10LFTA to view detailed technical specifications.
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