N-channel JFET for small signal applications. Features 60V drain-source breakdown voltage and 150mA continuous drain current. Offers a maximum drain-source on-resistance of 5 Ohms. Encased in a SOT-23 surface-mount package, this silicon FET operates from -55°C to 150°C with 330mW power dissipation.
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Diodes VN10LFTA technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 150mA |
| Current Rating | 150mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 7.5R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5R |
| Dual Supply Voltage | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 60pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 330mW |
| Rds On Max | 5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 2.5V |
| DC Rated Voltage | 60V |
| Weight | 0.000282oz |
| Width | 3.05mm |
| RoHS | Compliant |
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