Surface mount bipolar junction transistor (BJT) with NPN and PNP polarity, featuring a 1A continuous collector current and 70V collector-emitter breakdown voltage. This silicon transistor offers a 150MHz gain bandwidth product and a 100MHz transition frequency, with a maximum power dissipation of 2W. Packaged in an 8-pin SM-8 (SMD/SMT) case, it operates from -55°C to 150°C and is RoHS and REACH SVHC compliant.
PackageSMD/SMT
Current Rating1A
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Diodes ZHB6792TA technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 70V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 750mV |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| Height | 1.6mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 70V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZHB6792TA Datasheet
Download the complete datasheet for Diodes ZHB6792TA to view detailed technical specifications.
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