Surface mount bipolar junction transistor (BJT) with NPN and PNP polarity, featuring a 1A continuous collector current and 70V collector-emitter breakdown voltage. This silicon transistor offers a 150MHz gain bandwidth product and a 100MHz transition frequency, with a maximum power dissipation of 2W. Packaged in an 8-pin SM-8 (SMD/SMT) case, it operates from -55°C to 150°C and is RoHS and REACH SVHC compliant.
PackageSMD/SMT
Current Rating1A
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Diodes ZHB6792TA technical specifications.
General
Package/Case
SMD/SMT
Collector Base Voltage (VCBO)
70V
Collector Emitter Breakdown Voltage
70V
Collector Emitter Saturation Voltage
-500mV
Collector-emitter Voltage-Max
750mV
Continuous Collector Current
1A
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
150MHz
Height
1.6mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
70V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN, PNP
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
100MHz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZHB6792TA Datasheet
Download the complete datasheet for Diodes ZHB6792TA to view detailed technical specifications.
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