ZTX1048A

NPN BJT Transistor, 4A I(C), 17.5V V(CE), 150MHz, TO-92

NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 4A continuous collector current and a 17.5V collector-emitter breakdown voltage. Operates with a 150MHz transition frequency and offers a minimum DC current gain (hFE) of 300. Packaged in a TO-92 compatible E-LINE package, suitable for through-hole mounting. Rated for a maximum power dissipation of 1W and operates across a temperature range of -55°C to 200°C.

Frequency150MHz

PackageTO-92

Current Rating4A

MountingThrough Hole

Quick Jump:

Technical Specifications

Diodes ZTX1048A technical specifications.

General

Package/Case	TO-92
Collector Base Voltage (VCBO)	50V
Collector Emitter Breakdown Voltage	17.5V
Collector Emitter Voltage (VCEO)	17.5V
Collector-emitter Voltage-Max	245mV
Continuous Collector Current	4A
Current Rating	4A
Emitter Base Voltage (VEBO)	5V
Frequency	150MHz
Gain Bandwidth Product	150MHz
Height	4.01mm
hFE Min	300
Lead Free	Lead Free
Length	4.77mm
Max Collector Current	4A
Max Operating Temperature	200°C
Min Operating Temperature	-55°C
Max Power Dissipation	1W
Mount	Through Hole
Number of Elements	1
Package Quantity	4000
Packaging	Bulk
Polarity	NPN
Power Dissipation	1W
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Transition Frequency	150MHz
DC Rated Voltage	17.5V
Weight	0.016oz
Width	2.41mm