NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 4A continuous collector current and a 17.5V collector-emitter breakdown voltage. Operates with a 150MHz transition frequency and offers a minimum DC current gain (hFE) of 300. Packaged in a TO-92 compatible E-LINE package, suitable for through-hole mounting. Rated for a maximum power dissipation of 1W and operates across a temperature range of -55°C to 200°C.
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| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 17.5V |
| Collector Emitter Voltage (VCEO) | 17.5V |
| Collector-emitter Voltage-Max | 245mV |
| Continuous Collector Current | 4A |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 4.01mm |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 17.5V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
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