NPN Silicon Bipolar Junction Transistor (BJT) with a 4A continuous collector current and 25V collector-emitter breakdown voltage. Features a 180MHz transition frequency and 1W power dissipation. Packaged in a 3-lead E-LINE (TO-92) through-hole mount configuration. Operates across a -55°C to 200°C temperature range. RoHS and REACH SVHC compliant.
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| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 220mV |
| Continuous Collector Current | 4A |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 180MHz |
| Gain Bandwidth Product | 180MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 180MHz |
| DC Rated Voltage | 25V |
| Width | 2.41mm |
| RoHS | Compliant |
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