
NPN bipolar junction transistor featuring a 75V collector-emitter breakdown voltage and 3A continuous collector current. This silicon transistor offers a 140MHz transition frequency and a 1W maximum power dissipation. Housed in a TO-92 E-LINE package, it supports through-hole mounting and operates within a temperature range of -55°C to 200°C.
Diodes ZTX1053A technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 75V |
| Collector Emitter Voltage (VCEO) | 75V |
| Collector-emitter Voltage-Max | 350mV |
| Continuous Collector Current | 3A |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 140MHz |
| Gain Bandwidth Product | 140MHz |
| Height | 4.01mm |
| Length | 4.77mm |
| Max Collector Current | 3A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 140MHz |
| DC Rated Voltage | 74V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZTX1053A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.