PNP bipolar junction transistor (BJT) for general-purpose applications. Features a 12V collector-emitter breakdown voltage and a continuous collector current of -4A. Offers a low collector-emitter saturation voltage of -175mV and a transition frequency of 115MHz. Packaged in a TO-92 through-hole mount, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 1W.
PackageTO-92
MountingThrough Hole
PolarityPNP
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Technical Specifications
Diodes ZTX1147ASTZ technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -15V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -175mV |
| Collector-emitter Voltage-Max | 235mV |
| Continuous Collector Current | -4A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 115MHz |
| Height | 4.01mm |
| Length | 4.77mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | ZTX1147 |
| Transition Frequency | 115MHz |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX1147ASTZ Datasheet
Download the complete datasheet for Diodes ZTX1147ASTZ to view detailed technical specifications.
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