
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -1A, collector-emitter breakdown voltage of 30V, and a gain bandwidth product of 100MHz. Housed in a TO-92 compatible E-Line package, this through-hole component offers a maximum power dissipation of 1W and operates across a wide temperature range of -55°C to 150°C. It is lead-free, RoHS compliant, and SVHC compliant.
Diodes ZTX549STZ technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -35V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 750mV |
| Continuous Collector Current | -1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Height | 4.95mm |
| Lead Free | Lead Free |
| Length | 4.95mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -25V |
| Weight | 0.016oz |
| Width | 3.94mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZTX549STZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
