NPN Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 160V collector-emitter breakdown voltage (VCEO) and 180V collector-base voltage (VCBO). Offers a continuous collector current of 1A and a maximum power dissipation of 1W. Operates within a temperature range of -55°C to 150°C with a transition frequency of 250MHz. Packaged in a TO-92 compatible E-LINE package, supplied on tape and reel.
PackageTO-92
Current Rating1A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Diodes ZTX601BSTZ technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector-emitter Voltage-Max | 1.2V |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 160V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX601BSTZ Datasheet
Download the complete datasheet for Diodes ZTX601BSTZ to view detailed technical specifications.
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