NPN bipolar junction transistor (BJT) for small signal applications. Features a 160V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of 1A. Operates with a maximum power dissipation of 1W and a transition frequency of 250MHz. Housed in a TO-92 compatible E-LINE package, suitable for through-hole mounting. This silicon transistor offers a wide operating temperature range from -55°C to 200°C and is lead-free and RoHS compliant.
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Diodes ZTX601STZ technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector-emitter Voltage-Max | 1.2V |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Box |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 160V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
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