NPN Bipolar Junction Transistor (BJT) for small signal applications. Features 80V Collector-Emitter Breakdown Voltage (VCEO) and 1A Continuous Collector Current (IC). Operates with a 100V Collector-Base Voltage (VCBO) and 10V Emitter-Base Voltage (VEBO). Packaged in a TO-92 compatible E-Line package, this silicon transistor offers a 150MHz transition frequency and 1W maximum power dissipation. Suitable for through-hole mounting, it is lead-free, RoHS compliant, and REACH SVHC compliant.
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| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 1V |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 80V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
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