NPN bipolar junction transistor (BJT) for small signal applications. Features a 120V collector-emitter breakdown voltage and 1A continuous collector current. Operates with a 140V collector-base voltage and 10V emitter-base voltage. Housed in a TO-92 compatible E-Line package, this silicon transistor offers a transition frequency of 150MHz and a maximum power dissipation of 1W. Suitable for through-hole mounting, it operates across a temperature range of -55°C to 150°C and is RoHS compliant.
Diodes ZTX605STZ technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 120V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
No datasheet is available for this part.
