NPN silicon bipolar junction transistor (BJT) for small signal applications. Features 100V collector-emitter breakdown voltage (V(BR)CEO) and 800mA continuous collector current (I(C)). With a maximum power dissipation of 1W and operating temperature range of -55°C to 150°C, this component is housed in a TO-92 compatible E-LINE package. Through-hole mounting and lead-free construction ensure ease of integration.
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Diodes ZTX614STZ technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 1.25V |
| Continuous Collector Current | 800mA |
| Current Rating | 800mA |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
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