
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 20V Collector-Emitter Breakdown Voltage (VCEO) and a 3.5A Continuous Collector Current. Operates with a 5V Emitter-Base Voltage (VEBO) and offers a 140MHz Gain Bandwidth Product. Housed in a TO-92 E-LINE package, this through-hole component supports a wide temperature range from -55°C to 200°C and has a maximum power dissipation of 1W. RoHS compliant.
Diodes ZTX618 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 210mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 255mV |
| Continuous Collector Current | 3.5A |
| Current Rating | 3.5A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 140MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 3.5A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 140MHz |
| DC Rated Voltage | 20V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZTX618 to view detailed technical specifications.
No datasheet is available for this part.
