NPN bipolar junction transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage (VCEO) and a continuous collector current (IC) rating of 2A. Operates with a maximum power dissipation of 1W and a transition frequency of 175MHz. Housed in a TO-92 compatible E-Line package, suitable for through-hole mounting. Compliant with RoHS and REACH SVHC standards.
Frequency175MHz
PackageTO-92-3
Current Rating2A
MountingThrough Hole
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Technical Specifications
Diodes ZTX651STZ technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
230mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
2A
Current Rating
2A
Emitter Base Voltage (VEBO)
5V
Frequency
175MHz
Gain Bandwidth Product
175MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Breakdown Voltage
60V
Max Collector Current
2A
Max Frequency
175MHz
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Box
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
175MHz
DC Rated Voltage
60V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX651STZ Datasheet
Download the complete datasheet for Diodes ZTX651STZ to view detailed technical specifications.
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