NPN Silicon Bipolar Junction Transistor (BJT) in a TO-92 compatible E-LINE package. Features a continuous collector current of 2A, a collector-emitter breakdown voltage of 100V, and a maximum power dissipation of 1W. Offers a transition frequency of 175MHz and a collector-emitter saturation voltage of 230mV. Designed for through-hole mounting with a wide operating temperature range from -55°C to 200°C. RoHS compliant and lead-free.
Frequency175MHz
PackageTO-92
Current Rating2A
MountingThrough Hole
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Technical Specifications
Diodes ZTX653STZ technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 230mV |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 2A |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 175MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 2A |
| Max Frequency | 175MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 175MHz |
| DC Rated Voltage | 100V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX653STZ Datasheet
Download the complete datasheet for Diodes ZTX653STZ to view detailed technical specifications.
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