NPN bipolar junction transistor featuring a 400V collector-emitter breakdown voltage and 500mA continuous collector current. This silicon transistor offers a 500mV collector-emitter saturation voltage and a 50MHz transition frequency. Designed for through-hole mounting, it is housed in a TO-92 compatible E-LINE package. Operating across a temperature range of -55°C to 150°C, this lead-free component is RoHS and REACH SVHC compliant.
Diodes ZTX658STZ technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 50MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 400V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZTX658STZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.