NPN Silicon Bipolar Junction Transistor (BJT) in a TO-92 compatible E-Line package. Features a 12V Collector Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of 3A. Offers a maximum power dissipation of 1W and a transition frequency of 150MHz. Designed for through-hole mounting with a wide operating temperature range from -55°C to 200°C. RoHS compliant.
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Diodes ZTX688B technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 350mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 350mV |
| Continuous Collector Current | 3A |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| Height | 4.01mm |
| Length | 4.77mm |
| Max Collector Current | 3A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 12V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
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