DIODES

ZTX688B

Datasheet

NPN BJT Transistor, 3A I(C), 12V V(CE), 150MHz, TO-92

Diodes

ZTX688B

Name: ZTX688B Diodes
Brand: Diodes
SKU: ZTX688B

NPN BJT Transistor, 3A I(C), 12V V(CE), 150MHz, TO-92

NPN Silicon Bipolar Junction Transistor (BJT) in a TO-92 compatible E-Line package. Features a 12V Collector Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of 3A. Offers a maximum power dissipation of 1W and a transition frequency of 150MHz. Designed for through-hole mounting with a wide operating temperature range from -55°C to 200°C. RoHS compliant.

PackageTO-92

Current Rating3A

MountingThrough Hole

PolarityNPN

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Technical Specifications

Diodes ZTX688B technical specifications.

General

Package/Case	TO-92
Collector Base Voltage (VCBO)	12V
Collector Emitter Breakdown Voltage	12V
Collector Emitter Saturation Voltage	350mV
Collector Emitter Voltage (VCEO)	12V
Collector-emitter Voltage-Max	350mV
Continuous Collector Current	3A
Current Rating	3A
Emitter Base Voltage (VEBO)	5V
Gain Bandwidth Product	150MHz
Height	4.01mm
Length	4.77mm
Max Collector Current	3A
Max Operating Temperature	200°C
Min Operating Temperature	-55°C
Max Power Dissipation	1W
Mount	Through Hole
Package Quantity	4000
Packaging	Bulk
Polarity	NPN
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Transition Frequency	150MHz
DC Rated Voltage	12V
Weight	0.016oz
Width	2.41mm