PNP Silicon Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 120V Collector-Emitter Breakdown Voltage (V(BR)CEO) and a continuous collector current rating of -1A. Offers a maximum power dissipation of 1W and a transition frequency of 160MHz. This through-hole mount component operates within a temperature range of -55°C to 200°C and is RoHS compliant.
PackageTO-92
Current Rating-1A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Diodes ZTX705 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
140V
Collector Emitter Breakdown Voltage
120V
Collector Emitter Saturation Voltage
1.3V
Collector Emitter Voltage (VCEO)
120V
Collector-emitter Voltage-Max
2.5V
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
10V
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
1A
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
PNP
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
160MHz
DC Rated Voltage
-120V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX705 Datasheet
Download the complete datasheet for Diodes ZTX705 to view detailed technical specifications.
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