PNP Silicon Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 120V Collector-Emitter Breakdown Voltage (V(BR)CEO) and a continuous collector current rating of -1A. Offers a maximum power dissipation of 1W and a transition frequency of 160MHz. This through-hole mount component operates within a temperature range of -55°C to 200°C and is RoHS compliant.
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Diodes ZTX705 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 1.3V |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | -1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 160MHz |
| DC Rated Voltage | -120V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
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